BST31B1P4K01-VC (新产品)
HSDIP20, 750V, 31A, Full-bridge, Automotive / Industrial Grade SiC Power Module
The BST31B1P4K01 is a high-performance SiC molded module rated for 750V, designed with a 4-in-1 structure ideal for PFC and LLC circuits in onboard chargers (OBCs). HSDIP20 features an insulating substrate with excellent heat dissipation properties. This helps maintain a stable chip temperature even under high power conditions, enabling high current handling within a compact form factor. Compared to top-side cooled discrete devices, it delivers over 3 times the power density—and 1.4 times that of other DIP modules. In PFC applications, it can reduce the mounting area by about 52%, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs. With essential power conversion circuits built into the module, it reduces design workload and enables the miniaturization of power conversion circuits in OBCs and other applications. As a key solution for next-generation automotive systems, it supports the development of high-output, compact electric powertrains.
Application Examples Automotive systems: Onboard chargers, electric compressors and more. Industrial Equipment: EV charging stations, V2X systems, AC servos, server power supplies, PV inverters, power conditioners, etc.
主要规格
型号 | BST31B1P4K01-VC
封装 |
HSDIP20
包装形态 | Corrugated Cardboard
包装数量 | 180
最小独立包装数量 | 60
RoHS |
Yes
特性：
Drain-source Voltage[V]
750
Total Power Dissipation[W]
152
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package Size [mm]
38.0x31.3 (t=3.5)
Find Similar
特点：
HSDIP20 package with the 4th Generation SiC-MOSFET VDSS = 750V Low RDS(on) High-speed switching possible Low switching losses Tvjmax = 175°C Compact design With high thermal conductivity isolation Integrated NTC temperature sensor 4.2kV AC 1s insulation
Videos & Catalogs
产品视频一览
内置SiC MOSFET的小型封装型模块（HSDIP20） - BSTxxx1P4K01, BSTxxx2P4K01
2025-04-24 00:00:00.0
( 1.46 MB )
BSTxxx1P4K01（750V）和BSTxxx2P4K01（1,200V）是内置4枚或6枚SiC MOSFET的封装型模块。通过将大功率应用的电源转换电路中所需的基本电路集成到小型模块封装中，助力实现应用产品的小型化。
BSTxxx1P4K01（750V）和BSTxxx2P4K01（1,200V）是内置4枚或6枚SiC MOSFET的封装型模块。通过将大功率应用的电源转换电路中所需的基本电路集成到小型模块封装中，助力实现应用产品的小型化。
产品视频一览
Xin1 SiC模块 HSDIP20
2025-04-24 00:00:00.0
( 3:11 )
HSDIP20封装中配备了兼具"低导通电阻"和"高速开关"的ROHM SiC MOSFET。实现了业界超高电流密度，并支持快速充电等应用。
HSDIP20封装中配备了兼具"低导通电阻"和"高速开关"的ROHM SiC MOSFET。实现了业界超高电流密度，并支持快速充电等应用。
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